Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers


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Among the types of dislocation seen in homo-epilayers of SiC grown upon 4H-SiC wafers with an 8° surface offcut are basal plane dislocations propagated into the epilayer at an 8° inclination, and threading edge dislocations. These types may be imaged by monochromatic synchrotron x-ray topography in the grazing-incidence reflection geometry using the 11 2 8 reflection. Equations needed to apply the ray-tracing method of computer simulating x-ray topographic defect images in this experimental geometry were derived and used to simulate images of the threading edge dislocations. Simulations of the threading edge dislocations showed 4 μm wide white ovals with narrow arcs of dark contrast at their ends, inclined relative to the g-vector of the topograph according to the sign of their Burgers vector. These resembled the experimental topographs, inasmuch as was possible at the maximum resolution of x-ray topographs.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




W. M. Vetter et al., "Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers", Materials Science Forum, Vols. 527-529, pp. 411-414, 2006

Online since:

October 2006




[1] S. Ha, P. Mieszkowski, M. Skowronski and L. B. Rowland: J. Cryst. Growth Vol. 244 (2002), p.257.

[2] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki and K. Arai: J. Cryst. Growth Vol. 260 (2004), p.209.

[3] X. R. Huang, M. Dudley, W. M. Vetter, W. Huang, W. Si and C. H. Carter, Jr.: J. Appl. Cryst. Vol. 32 (1999), p.516.

[4] A. R. Lang: Diffraction and Imaging Techniques in Materials Science, edited by S. Amelinckx, R. Gevers and J. Van Landuyt (North Holland, Amsterdam 1978) p.623.