3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

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Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planar mapping EBIC method with the control of accelerating voltages. Screw dislocation (SD), edge dislocation (ED), and basal plane dislocation (BPD) were clearly observed through the 20nm-thick Ni Schottky contact on SiC. From the analysis of BPD extended on {0001}, the intensity of EBIC signals was proportional to the depth position of defect. In addition, the information of the decomposition and combination for dislocations can be obtained from the fluctuation of EBIC signal along the scanning position.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

423-426

Citation:

Y. Yanagisawa et al., "3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method", Materials Science Forum, Vols. 527-529, pp. 423-426, 2006

Online since:

October 2006

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$38.00

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DOI: https://doi.org/10.1038/nature02810

[1] SD ED B B' epi/sub interface 4H-SiC 8o off sub. 8. 7μm.