A New Method of Mapping and Counting Micropipes in SiC Wafers

Abstract:

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Micropipes are considered to be a major device killer in SiC wafers. Developing a method to count and map micropipes efficiently and accurately has been a challenging task to date. In this work, a new method based on KOH etching and full wafer, high resolution digital imaging is developed to map and count micropipes in both conductive and semi-insulating SiC wafers. This method is also compared with a non-destructive method based on laser light scattering and a good agreement between the two methods is demonstrated.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

447-450

DOI:

10.4028/www.scientific.net/MSF.527-529.447

Citation:

J. W. Wan et al., "A New Method of Mapping and Counting Micropipes in SiC Wafers", Materials Science Forum, Vols. 527-529, pp. 447-450, 2006

Online since:

October 2006

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Price:

$35.00

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