A New Method of Mapping and Counting Micropipes in SiC Wafers


Article Preview

Micropipes are considered to be a major device killer in SiC wafers. Developing a method to count and map micropipes efficiently and accurately has been a challenging task to date. In this work, a new method based on KOH etching and full wafer, high resolution digital imaging is developed to map and count micropipes in both conductive and semi-insulating SiC wafers. This method is also compared with a non-destructive method based on laser light scattering and a good agreement between the two methods is demonstrated.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




J. W. Wan et al., "A New Method of Mapping and Counting Micropipes in SiC Wafers", Materials Science Forum, Vols. 527-529, pp. 447-450, 2006

Online since:

October 2006




[1] P.G. Neudeck, W. Huang, and M. Dudley: IEEE Trans. Electron Device, Vol. 46 (1999) p.478.

[2] A.P. Powell, R.T. Leonard, M.F. Brady, St.G. Müller, V.F. Tsvetkov, R. Trussell, J.J. Sumakeris, H. McD. Hobgood, A.A. Burk, R.C. Glass, and C.H. Carter, Jr.: Mat. Sci. Forum Vols. 457-460, (2004), pp.41-46.

DOI: 10.4028/www.scientific.net/msf.457-460.41

[3] E. Emorhokpor, T. Kerr, I. Zwieback, W. Elkington, M. Dudley, T. Anderson, and J. Chen: Mat. Res. Soc. Symp. Proc. Vol. 815, (2003), J5. 19. 1.

Fetching data from Crossref.
This may take some time to load.