Growth of SiC Boules with Low Boron Concentration


Article Preview

The effects of growth conditions, diffusion barrier coatings, and hot zone materials on B incorporation in 6H-SiC crystals grown by physical vapor transport (PVT) were evaluated. Development of high purity source material with a B concentration less than 1.8x1015 atoms/cm3, was critical to the growth of boules with a B concentration less than 3.0x1016 atoms/cm3. Application of refractory metal carbide coatings to commercial graphite to serve as boron diffusion barriers and the use of very high purity pyrolytic graphite components ultimately led to the growth of SiC boules with boron concentrations as low as 2.4x1015 atoms/cm3. The effect of growth temperature and pressure were closely examined over a range from 2100°C to 2300°C and 5 to 13.5 Torr. This range of growth conditions and growth rates had no effect on B incorporation. Attempts to alter the gas phase stoichiometry through addition of hydrogen gas to the growth environment also had no impact on B incorporation. These results are explained by considering site competition effects and the ability of B to diffuse through the graphite growth cell components.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




M. A. Fanton et al., "Growth of SiC Boules with Low Boron Concentration", Materials Science Forum, Vols. 527-529, pp. 47-50, 2006

Online since:

October 2006




[1] Y.M. Tairov: Mat. Sci. and Eng. B29 (1995) p.83.

[2] M. Anikin and R. Madar: Materials Science and Engineering B46 (1997) p.278.

[3] Y.M. Tairov and V.F. Tsvetkov,: Journal of Crystal Growth 43 (1978) p.209.

[4] J.W. Milligan, J.R. Jenny, A.R. Powell, H.M. Hobgood, A.A. Burk, S.T. Allen, A.W. Saxler, P.A. Parikh and J.W. Palmour: GOMACTech 2003 Proceedings (2003) p.148.

[5] V. Tsvetkov, R. Glass, D. Henshall, D. Asbury, and C. Carter: Mat. Sci. Forum 264-268 (1998) p.3.

[6] St.G. Muller, R.C. Glass, H.M. Hobgood, V.F. Tsvetkov, M. Brady, D. Henshall, J.R. Jenny, D. Malta, and C.H. Carter: Journal of Crystal Growth 211 (2000) p.325.


[7] D.J. Larkin, P.G. Neudeck, J.A. Powell L.G. Matus: Applied Physics Letters 65 (1994) 1659.

[8] D.L. Barrett, J.P. McHugh, H.M. Hobgood, R.H. Hopkins, P.G. McMullin, and R.C. Clarke: Journal of Crystal Growth 128 (1993) 358.


[9] H.M. Hobgood, D.L. Barrett, J.P. McHugh, R.C. Clarke, S. Sriram, A.A. Burk, J. Greggi, C.D. Brandt, R.H. Hopkins, and W.J. Choyke: Journal of Crystal Growth 137 (1994) p.181.


[10] P. Grosse, G. Basset, C. Calvat, M. Couchaud, C. Faure, B. Ferrand, Y. Grange, M. Anikin, J.M. Bluet, K. Chourou, R. Madar: Materials Science and Engineering B61-62 (1999) p.58.


[11] G. Augustine, V. Balakrishna, C.D. Brandt, Journal of Crystal Growth 211 (2000) p.339.

[12] M. Bickermann, D. Hofmann, T.L. Straubinger, R. Weingärtner, P.J. Wellmann, and A. Winnacker: Applied Surface Science 184 (2001) p.84.

[13] M. Bickermann, B.M. Epelbaum, D. Hofmann, T.L. Straubinger, R. Weingärtner, and A. Winnacker: Journal of Crystal Growth 233 (2001) p.211.

[14] M. Syvajarvi, R. Yakimova, A. Kakanakova-Georgieva, S.G. Sridhara, M.K. Linnarsson, and E. Janzén: Journal of Crystal Growth 237-239 (2002) p.1230.


[15] CRC Handbook of Chemistry and Physics, CRC Press, Inc., (1990).

[16] P.G. Valentine, P.W. Trester, J. Winter, J. Linke, J.L. Kaae, A. Schuster, H. Bolt, R. Duwe, E. Wallura, and V. Philipps: Journal of Nuclear Materials 220-222 (1995) p.756.


[17] G. Hennig: Journal of Chemical Physics 42 (1965) p.1167.

[18] J.A. Turnbull, M.S. Stagg, and W.T. Eeles: Carbon 3 (1966) p.387.

[19] H.N. Murty, D.L. Biederman, and E.A. Heintz: Fuel 56 (1977) p.305.

[20] L.E. Jones and P.A. Thrower: Carbon 29 (1991) p.251.

[21] Q. Li, A.Y. Polyakov, M. Skowronski, M. A. Fanton, R. C. Cavalero, R.G. Ray, B.E. Weiland, Appl. Phys. Lett. 86 (2005) p.202102.