Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates

Abstract:

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A variety of 4H-SiC samples from undoped crystals grown by the physical vapor transport technique have been studied by temperature dependent Hall effect, optical and thermal admittance spectroscopy and thermally stimulated current. In most samples studied the activation energies were in the range 0.9 - 1.6 eV expected for commercial grade HPSI 4H-SiC. However, in several samples from developmental crystals a previously unreported deep level at EC-0.55 ± 0.01 eV was observed. Thermal admittance spectroscopy detected one level with an energy of about 0.53 eV while optical admittance spectroscopy measurements resolved two levels at 0.56 and 0.64 eV. Thermally stimulated current measurements made to study compensated levels in the material detected several peaks at energies in the range 0.2 to 0.6 eV.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

505-508

DOI:

10.4028/www.scientific.net/MSF.527-529.505

Citation:

W.C. Mitchel et al., "Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates", Materials Science Forum, Vols. 527-529, pp. 505-508, 2006

Online since:

October 2006

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$35.00

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