Quenching Photoconductivity and Photoelectric Memory in 6H-SiC

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In this paper superlinear dependence in the intensity–current characteristic, optical and temperature quenching of photocurrent and photoelectric memory in structures made on the basis of compensated 6H-SiC at room and high temperatures are reported. The maximal time of decreasing of the residual current was 5*104 s. With illumination by additional light with 0.62 μm wavelength and increasing of the applied voltage the value of residual current can be changed. The depth sensitivity centre is positioned at Ec -1.1eV and the cross section of captured holes on this centre is 10-21-10-22 cm2 based on our measurements.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

513-516

Citation:

M. Duisenbaev "Quenching Photoconductivity and Photoelectric Memory in 6H-SiC", Materials Science Forum, Vols. 527-529, pp. 513-516, 2006

Online since:

October 2006

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