Thermal Evolution of Defects in Semi-Insulating 4H SiC

Abstract:

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High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

531-534

DOI:

10.4028/www.scientific.net/MSF.527-529.531

Citation:

W.E. Carlos et al., "Thermal Evolution of Defects in Semi-Insulating 4H SiC", Materials Science Forum, Vols. 527-529, pp. 531-534, 2006

Online since:

October 2006

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Price:

$35.00

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