Thermal Evolution of Defects in Semi-Insulating 4H SiC
High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
W.E. Carlos et al., "Thermal Evolution of Defects in Semi-Insulating 4H SiC", Materials Science Forum, Vols. 527-529, pp. 531-534, 2006