Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance


Article Preview

Two types of a new triplet centers labeled as N-V have been observed in heavily neutron irradiated (dose of 1021 cm-2) and high-temperature annealed (2000°C) 6H-SiC crystals. The centers have an axial symmetry along c-axis. Anisotropic hyperfine splitting due to the one 14N nucleus has been observed. The EPR spectra of N-V defects in the triplet state in 6H-SiC reveal strong temperature dependence. The parameters of these centers are similar to that for well-known N-V center in diamond. It seems to consist of silicon vacancy and carbon substitutional nitrogen in the adjacent lattice cites oriented along c-axis. Similar to the diamond N-V centers in SiC have been produced by neutron irradiation and high-temperature annealing of the crystals containing nitrogen. For the first shell the structure of the N-V defect in 6H-SiC is practically identical with that in diamond. The charge state of this defect seems to be +1 compare with neutral state for nitrogensilicon vacancy defect in 6H-SiC with S=1/2.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




M. V. Muzafarova et al., "Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance", Materials Science Forum, Vols. 527-529, pp. 555-558, 2006

Online since:

October 2006





[1] E. Raus, U. Gerstmann, Th. Frauenheim and H. Overhof: Physica B Vols. 340-342 (2003), p.184.

[2] V.S. Vainer and V.A. Il'in: Sov. Phys. Solid State Vol. 23 (1981), p.1432.

[3] Xing-Fei He, Neil B. Manson, and Peter T.H. Fisk: Phys. Rev. B 47 (1993), p.8816 and references therein.

[4] A. Gruber, A. Drabenstedt, C. Tietz, L. Fleury, J. Wrachtrup, and C. von Borczyskowski: Science 276 (1997), p.2012 and references therein.

[5] G.D. Watkins and J.W. Corbett: Phys. Rev. 134 (1964), A1359.

[6] J.R. Morton and K.F. Preston: J. Magn. Reson. 30 (1978), p.577.