Shallow P Donors in 3C-, 4H- and 6H-SiC

Abstract:

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EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-, 4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signals from the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon and carbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC which was also free from the interference from the signals from the nitrogen shallow donors.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

593-596

DOI:

10.4028/www.scientific.net/MSF.527-529.593

Citation:

J. Isoya et al., "Shallow P Donors in 3C-, 4H- and 6H-SiC", Materials Science Forum, Vols. 527-529, pp. 593-596, 2006

Online since:

October 2006

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Price:

$35.00

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