A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers


Article Preview

Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical vapor deposited (CVD) SiC layers. CVD conditions have been simulated by using the appropriate chemical potentials for hydrogen and phosphorus (P). We found that the most abundant defect is P at Si-site followed by P at C-site. The calculated concentrations of the P-donors and free carriers in CVD grown SiC agree with the experimental results.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




T. Hornos et al., "A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers", Materials Science Forum, Vols. 527-529, pp. 605-608, 2006

Online since:

October 2006




[1] M. Bockstedte, M. Mattausch and O. Pankratov: Appl. Phys. Lett. Vol. 85 (2003), p.58.

[2] K. Semmelroth et al.: Mater. Sci. Forum Vol. 433 (2003), p.63.

[3] R. Wang, I. B. Bhat and T. P. Chow: J. Appl. Phys. Vol. 92 (2002), p.7587.

[4] D. J. Larkin et al.: Inst. Phys. Conf. Ser. Vol. No. 137 (1994), p.51.

[5] B. Aradi et al.: Appl. Phys. Lett. Vol. 79 (2001), p.2746.

[6] B. Aradi et al.: Phys. Rev. B Vol. 63 (2001), p.245202.

[7] A. Gali et al.: Phys. Rev. B Vol. 71 (2005), p.035213.

[8] A. Henry and E. Janz´en: Mater. Sci. Forum Vol. 483-485 (2005), p.101.

[9] The estimated uncertainty of the binding energy due to the charged supercell is about 0. 2 eV.

Fetching data from Crossref.
This may take some time to load.