A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers

Abstract:

Article Preview

Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical vapor deposited (CVD) SiC layers. CVD conditions have been simulated by using the appropriate chemical potentials for hydrogen and phosphorus (P). We found that the most abundant defect is P at Si-site followed by P at C-site. The calculated concentrations of the P-donors and free carriers in CVD grown SiC agree with the experimental results.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

605-608

DOI:

10.4028/www.scientific.net/MSF.527-529.605

Citation:

T. Hornos et al., "A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers", Materials Science Forum, Vols. 527-529, pp. 605-608, 2006

Online since:

October 2006

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.