Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC

Abstract:

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A multiple data point version of the industry standard, two data point raster-changing procedure is employed to measure low levels (< 1 x 1017 atoms/cm3) of nitrogen (N) in silicon carbide (SiC) by SIMS (Secondary Ion Mass Spectrometry). A current-changing procedure is also employed. Together, these are used evaluate the assumptions of the standard method, to separate and measure the components of background signal, and to improve upon the precision and accuracy of the standard method. The risk of poor precision in the two-point method is demonstrated, as is the improvement provided by the multiple-point method. Results show that, in addition to the wellknown N memory background, adsorption background can contribute significantly to the N signal. In general, establishing the presence of adsorption gas in this way can be used to warn of the presence of ionization background, which is not measurable per se.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

617-620

DOI:

10.4028/www.scientific.net/MSF.527-529.617

Citation:

H. E. Smith et al., "Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC", Materials Science Forum, Vols. 527-529, pp. 617-620, 2006

Online since:

October 2006

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Price:

$35.00

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