Kinetic Mechanisms for the Deactivation of Nitrogen in SiC
Kinetic mechanisms for the deactivation of nitrogen are investigated by ab initio theory. We find that the interaction of nitrogen with self-interstitials can lead to a deactivation of nitrogen, yet it cannot explain the experimentally observed nitrogen deactivation at high temperatures in silicon co-implanted samples. Our analysis suggests the aggregation of vacancies at high temperatures and the subsequent formation of passive nitrogen-vacancy complexes as a likely explanation.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
M. Bockstedte et al., "Kinetic Mechanisms for the Deactivation of Nitrogen in SiC", Materials Science Forum, Vols. 527-529, pp. 621-624, 2006