Kinetic Mechanisms for the Deactivation of Nitrogen in SiC

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Kinetic mechanisms for the deactivation of nitrogen are investigated by ab initio theory. We find that the interaction of nitrogen with self-interstitials can lead to a deactivation of nitrogen, yet it cannot explain the experimentally observed nitrogen deactivation at high temperatures in silicon co-implanted samples. Our analysis suggests the aggregation of vacancies at high temperatures and the subsequent formation of passive nitrogen-vacancy complexes as a likely explanation.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

621-624

Citation:

M. Bockstedte et al., "Kinetic Mechanisms for the Deactivation of Nitrogen in SiC", Materials Science Forum, Vols. 527-529, pp. 621-624, 2006

Online since:

October 2006

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$38.00

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