Low Energy Ion Modification of 3C-SiC Surfaces

Abstract:

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The effects of argon and nitrogen bombardment of 3C-SiC surfaces at acceleration voltages below 2 keV were studied by stylus profilometry, reflectometry, reflection high energy electron diffraction and Auger electron spectroscopy (AES). The erosion rate of the SiC surface was determined. It was found that the sputtering rate for argon was three times higher compared to nitrogen. AES measurements revealed argon and nitrogen incorporation at a depth of a few nanometers as well as stoichiometric changes at the same depth scale independent of the acceleration voltage. In the case of the interaction of nitrogen ions with the 3C-SiC surface the formation of a SiCNalloy was detected.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

685-688

DOI:

10.4028/www.scientific.net/MSF.527-529.685

Citation:

C. Förster et al., "Low Energy Ion Modification of 3C-SiC Surfaces", Materials Science Forum, Vols. 527-529, pp. 685-688, 2006

Online since:

October 2006

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Price:

$35.00

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