Phonons in SiC from INS, IXS, and Ab-Initio Calculations

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Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelastic neutron (INS) and X-ray scattering (IXS) are reported and contrasted with those of cubic 3C-SiC and silicon. The experimental frequencies and scattering intensities are in excellent agreement with those from first-principles calculations using density-functional methods. The relative merits of the two experimental techniques and aspects of the density functional perturbation theory and the so-called frozen phonon method for the determination of the basic phonon properties are briefly outlined.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

689-694

Citation:

D. Strauch et al., "Phonons in SiC from INS, IXS, and Ab-Initio Calculations", Materials Science Forum, Vols. 527-529, pp. 689-694, 2006

Online since:

October 2006

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$38.00

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