Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition

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We have performed a combined investigation of experiment and theory on the infrared reflectance from cubic SiC grown on Si by chemical vapor deposition. A damping behavior of the interference fringes away from the reststrahlen band and a dip or notch within the “flat top” are observed from some samples while they does not occur in high quality 3C-SiC/Si samples. The former is interpreted due to an interfacial transition layer existed between SiC-Si and a rough surface, while the latter can be demonstrated by a three-component effective medium model.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

695-698

Citation:

Z. C. Feng et al., "Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition", Materials Science Forum, Vols. 527-529, pp. 695-698, 2006

Online since:

October 2006

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$38.00

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DOI: https://doi.org/10.1007/978-3-662-09877-6_6

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