Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition


Article Preview

We have performed a combined investigation of experiment and theory on the infrared reflectance from cubic SiC grown on Si by chemical vapor deposition. A damping behavior of the interference fringes away from the reststrahlen band and a dip or notch within the “flat top” are observed from some samples while they does not occur in high quality 3C-SiC/Si samples. The former is interpreted due to an interfacial transition layer existed between SiC-Si and a rough surface, while the latter can be demonstrated by a three-component effective medium model.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




Z. C. Feng et al., "Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition", Materials Science Forum, Vols. 527-529, pp. 695-698, 2006

Online since:

October 2006




[1] J. A. Powell, P. Pirouz and W. J. Choyke: Growth and characterization of silicon carbide polytypes for electronic applications, in Semiconductor Interfaces, Microstructures and Devices: Properties and Applications, ed. Z. C. Feng, Institute of Physics Publishing, Bristol (1993).

[2] Z. C. Feng, Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition, in SiC Power Materials - Devices and Applications, ed. Zhe Chuan Feng, Springer, Berlin (2004), pp.209-276.


[3] A. T. S. Wee, Z. C. Feng, H. H. Hgn, K. L. Tan, C. C. Tin, R. Wu, and R. Coston: Appl. Surf. Science Vol. 81 (1994), p.377.

[4] Z. C. Feng, C. C. Tin, R. Hu, and J. Williams: Thin Solid Films Vol. 266 (1995), p.1.

[5] Z. C. Feng,Y. T. Hou, S. J. Chua, and M. F. Li: Surf. Interface Anal. Vol. 28 (1999), p.166.

[6] R. T. Holm, P. H. Klein and P. E. R. Nordquist, Jr.: J. Appl. Phys. Vol. 60 (1986), p.1479.

[7] W. G. Spitzer, D. A. Kleinman, and D. Walsh: Phys. Rev. Vol. 113 (1959), p.127.

[8] Y. Okamoto, S. V. Ordin, T. Kawahara, M. I. Fedorov, Y. Miida, and T. Miyakawa: J. Appl. Phys. Vol. 85 (1999), p.6728.