Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition
We have performed a combined investigation of experiment and theory on the infrared reflectance from cubic SiC grown on Si by chemical vapor deposition. A damping behavior of the interference fringes away from the reststrahlen band and a dip or notch within the “flat top” are observed from some samples while they does not occur in high quality 3C-SiC/Si samples. The former is interpreted due to an interfacial transition layer existed between SiC-Si and a rough surface, while the latter can be demonstrated by a three-component effective medium model.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Z. C. Feng et al., "Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition", Materials Science Forum, Vols. 527-529, pp. 695-698, 2006