Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC

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The work deals with the highly important problem of the qualitative temperature dependence of avalanche breakdown voltage in p-n junctions based on 4H-SiC. As it has been shown before, the temperature coefficient of avalanche breakdown voltage (TCABV) is negative in seven SiC polytypes, including 4Н-SiC. This effect has been explained by the Wannier-Stark localization (WSL). It is worth noting that the plane of the investigated p-n junctions coincided with the basal plane (0001). However the current SiC device technology prefers 4H-SiC p-n junction formation on a plane that has 8о disorientation from (0001). This may result in a weakening of the WSL and, correspondingly, in a positive TCABV. This problem has been elucidated in the present paper. The photocurrent of 4H-SiC p-n junctions in a strong electric field has been scrutinized, that has allowed to discover a negative differential conductivity region and it has testified to the WSL process and negative TCABV.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

707-710

Citation:

V. I. Sankin and R. Yakimova, "Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 707-710, 2006

Online since:

October 2006

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$38.00

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