Characterization of SiC Wafers by Photoluminescence Mapping


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The effectiveness of room-temperature photoluminescence (PL) mapping was demonstrated for nondestructive detection of structural defects, such as dislocations, micropipes and stacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissions due to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while those from epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensity mapping system with a capability of zooming in on the area of interest with a spatial resolution as high as 1 μm, and showed that the mapping patterns agree well with the etch-pit patterns originating from the structural defects both on a wafer scale and on a microscopic scale. The intensity contrast around the defects varied depending on the emission band, suggesting differences in their interactions with impurities and point defects.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow






M. Tajima et al., "Characterization of SiC Wafers by Photoluminescence Mapping", Materials Science Forum, Vols. 527-529, pp. 711-716, 2006

Online since:

October 2006




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