SiC Substrate Doping Profiles Using Commercial Optical Scanners

Abstract:

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Presented is the use of a commercial optical scanner for the mapping of doping density ( ) D N of SiC substrates and as a local probe for D N in different regions. This method provides a fast and cost effective method for determining D N homogeneity, examining local electrical characteristics, and recognizing defect sites including areas of different polytypes or polycrystallinity. Micro-Raman spectroscopy was used to calibrate the transmission intensity with D N . It is shown that features presented in the calculated D N maps strongly correlate to those observed in Lehighton resistivity maps.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

725-728

DOI:

10.4028/www.scientific.net/MSF.527-529.725

Citation:

J. D. Caldwell et al., "SiC Substrate Doping Profiles Using Commercial Optical Scanners", Materials Science Forum, Vols. 527-529, pp. 725-728, 2006

Online since:

October 2006

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Price:

$35.00

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