SiC Substrate Doping Profiles Using Commercial Optical Scanners
Presented is the use of a commercial optical scanner for the mapping of doping density ( ) D N of SiC substrates and as a local probe for D N in different regions. This method provides a fast and cost effective method for determining D N homogeneity, examining local electrical characteristics, and recognizing defect sites including areas of different polytypes or polycrystallinity. Micro-Raman spectroscopy was used to calibrate the transmission intensity with D N . It is shown that features presented in the calculated D N maps strongly correlate to those observed in Lehighton resistivity maps.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
J. D. Caldwell et al., "SiC Substrate Doping Profiles Using Commercial Optical Scanners", Materials Science Forum, Vols. 527-529, pp. 725-728, 2006