Columnar Pore Growth in n-Type 6H SiC


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A hybrid columnar and dendritic porous structure has been developed in n-type 6H SiC using photoelectrochemical etching with proper control of the applied voltage and current density. The diameter of the formed columnar pores is around 200-500 nm. A possible formation mechanism due to the spatial distribution of holes and the HF concentration gradient in the pores is proposed. A self-supporting film with this morphology is a promising candidate for protein dialysis.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




Y. Ke et al., "Columnar Pore Growth in n-Type 6H SiC", Materials Science Forum, Vols. 527-529, pp. 739-742, 2006

Online since:

October 2006




[1] J.S. Shor and A.D. Kurtz: J. Electrochem. Soc. 141 (1994), p.778.

[2] A.J. Rosenbloom et al.: Biomedical Microdevices 6 (2004), p.261.

[3] Y. Shishkin et al.: Mater. Sci. Forum Vols. 483-485 (2005), p.251 Fig. 5. The maximum surface pore diameter vs. applied current density for Si-face n-type 6H SiC (n~5. 7 ×10 17 cm-3) samples etched in 5% HF and 5% ethanol solution.

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