Columnar Pore Growth in n-Type 6H SiC

Abstract:

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A hybrid columnar and dendritic porous structure has been developed in n-type 6H SiC using photoelectrochemical etching with proper control of the applied voltage and current density. The diameter of the formed columnar pores is around 200-500 nm. A possible formation mechanism due to the spatial distribution of holes and the HF concentration gradient in the pores is proposed. A self-supporting film with this morphology is a promising candidate for protein dialysis.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

739-742

DOI:

10.4028/www.scientific.net/MSF.527-529.739

Citation:

Y. Ke et al., "Columnar Pore Growth in n-Type 6H SiC", Materials Science Forum, Vols. 527-529, pp. 739-742, 2006

Online since:

October 2006

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Price:

$35.00

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