Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD
A selective atmospheric pressure chemical vapor deposition (APCVD) process has been developed to deposit porous polycrystalline silicon carbide (poly-SiC) thin films containing a high density of through-pores measuring 50 to 70 nm in diameter. The selective deposition process involves the formation of poly-SiC films on patterned SiO2/polysilicon thin film multilayers using a carbonization-based 3C-SiC growth process. This technique capitalizes on significant differences in the nucleation of poly-SiC on SiO2 and polysilicon surfaces in order to form mechanically-durable, chemically-stable, and well anchored porous structures, thus offering a simple and potentially more versatile alternative to direct electrochemical etching.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
L. Chen et al., "Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD", Materials Science Forum, Vols. 527-529, pp. 755-758, 2006