Ion Implantation Processing and Related Effects in SiC
A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
B. G. Svensson et al., "Ion Implantation Processing and Related Effects in SiC", Materials Science Forum, Vols. 527-529, pp. 781-786, 2006