Ion Implantation Processing and Related Effects in SiC

Abstract:

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A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

781-786

DOI:

10.4028/www.scientific.net/MSF.527-529.781

Citation:

B. G. Svensson et al., "Ion Implantation Processing and Related Effects in SiC", Materials Science Forum, Vols. 527-529, pp. 781-786, 2006

Online since:

October 2006

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Price:

$35.00

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