Ion Implantation Processing and Related Effects in SiC


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A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




B. G. Svensson et al., "Ion Implantation Processing and Related Effects in SiC", Materials Science Forum, Vols. 527-529, pp. 781-786, 2006

Online since:

October 2006




[1] M.K. Linnarsson, M.S. Janson, A. Schöner, B.G. Svensson: Mat. Res. Soc. Symp. 742 (2003), p.291.

[2] M.T. Robinson and J. M Torrens: Phys. Rev. B 9 (2974), p.5008.

[3] D.G. Ashworth, R. Oven and B. Mundin: J. Phys. D 23 (1990), p.870.

[4] M.S. Janson, M.K. Linnarsson, A. Hallén, B.G. Svensson: J. Appl. Phys. 93 (2003), p.8903.

[5] M.S. Janson: Binary collision approximation code for crystalline targets SIIMPL (unpublished).

[6] M.S. Janson, M.K. Linnarsson, A. Hallén, and B.G. Svensson: J. Appl. Phys. 96 (2004), p.164.

[7] E. Wendler, A. Heft and W. Wesch: Nucl. Instr. Meth. B 143 (1998), p.105.

[8] W. Jiang, W.J. Weber, S. Thevuthsan and D.E. McCready: Nucl. Instr. Meth. B 143 (1998), p.333, and references therein.

[9] F.L. Vook and H.J. Stein: Radiat. Eff. 2 (1969), p.26.

[10] T. Ohno and K. Amemiya: Mater. Sci. Forum 389-393 (2002), p.823.

[11] Y. Zhang, W.J. Weber, W. Jiang, C.M. Wang, A. Hallén and G. Possnert: J. Appl. Phys. 93 (2003), p. (1954).

[12] A. Yu. Kuznetsov, J. Wong-Leung, A. Hallén, C. Jagadish and B.G. Svensson: J. Appl. Phys. 94 (2003), p.7112.

[13] J. Slotte, K. Saarinen, M.S. Janson, A. Hallén, A. Yu. Kuznetsov, B.G. Svensson, J. WongLeung and C. Jagadish: J. Appl. Phys. 97 (2005), p.033513.

[14] M. Bockstedte, M. Heid, A. Mattausch, O. Pankratov: Mater. Sci. Forum 389-393 (2002), p.471.

[15] M. Laube, G. Pensl and A. Itoh: Appl. Phys. Lett. 72 (1999), p.2292.

[16] M.S. Janson, M.K. Linnarsson, A. Hallén, B.G. Svensson: Appl. Phys. Lett. 76 (2000), p.1434.

[17] Y. Negoro, T. Kimoto and H. Matsunami: Mater. Sci. Forum 483-485 (2005), p.599.

[18] S.G. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, D.J. Larkin, H.S. Kong, T. Troffer and G. Pensl: J. Appl. Phys. 83 (1998), p. (2001).

[19] V.A. Gubanov and C.Y. Fong: Appl. Phys. Lett. 75 (1999), p.88.

[20] V. Heera, D. Panknin and W. Skorupa: Appl. Surf. Sci. 184 (2001), p.307.

[21] P. Deák, B. Aradi, A. Gali, U. Gerstmann W.J. Choyke: Mater. Sci. Forum 433-436 (2003), p.523.

[22] Yu.A. Vodakov, N. Zhumaev, and B.P. Zverev: Sov. Phys. Semicond. 11 (1977), p.214.

[23] See e. g., T. Kimoto, A. Itoh, H. Matsunami, T Nakata and M. Watanabe: J. Elect. Mat. 24 (1995), p.235.

[24] F. Schmid, T. Frank and G. Pensl: Mater. Sci. Forum 483-485 (2005), p.641.

[25] U. Gerstmann, E. Rauls, Th. Frauenheim and H. Overhof: Phys. Rev. B 67 (2003), p.205202.

[26] D. Åberg, A. Hallén, P. Pellegrino and B.G. Svensson: Appl. Surf. Sci. 184 (2001), p.263.

[27] J.P. Biersack and L.G. Haggmark: Nucl. Instr. Meth. 174 (1980), p.257.

[28] Yu.A. Vodakov, E.N. Mokhov, M.G. Ramm and A.D. Roenkov: Springer Proc. Phys. 56 (1992), p.329.

[29] M.A. Capano, R. Santhakumar, R. Venugopal, M.R. Melloch and J.A. Cooper Jr.: J. Electron. Mater. 29 (2000), p.210.

[30] Y. Negoro, N. Miyamoto, T. Kimoto and H. Matsunami: Appl. Phys. Lett. 80 (2002), p.240.

[31] F. Schmid, M. Laube, G. Pensl, G. Wagner and M. Maier: J. Appl. Phys. 91 (2002), p.9182.

[32] G. Alfieri, E.V. Monakhov, B.G. Svensson, M.K. Linnarsson: J. Appl. Phys. 98 (2005), p.043518.