Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC

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The long term performance of today’s SiC based bipolar power devices suffer strongly from stacking fault formation caused by slip of basal plane dislocations, the latter often originating from the n-type doped SiC substrate wafer. In this paper, using sequentially p-type / n-type / p-type doped SiC crystals, we address the question, whether basal plane dislocation generation and annihilation behaves differently in n-type and p-type SiC. We have found that basal plane dislocations are absent or at least appear significantly less pronounced in p-type doped SiC, which may become of great importance for the stacking fault problem in SiC.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

79-82

Citation:

P. J. Wellmann et al., "Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC", Materials Science Forum, Vols. 527-529, pp. 79-82, 2006

Online since:

October 2006

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$38.00

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