Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures

Abstract:

Article Preview

The annealing behavior of the N+ implantation-induced defects in 4H-SiC(0001) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 200 to 1000 oC. The samples are multiple-implanted by N+ ions with energy range from 15 to 120 keV at a total dose of 2.4 x 1015 /cm2. Three annealing stages are observed by isochronal annealing; first stage from 200 to 400 oC, second stage from 400 to 600 oC and third stage from 600 to 1000 oC. The 80 percent of the N+ implantation-induced defects are annealed out at the temperature above 600 oC. The annealing mechanism of the defects in each stage is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

791-794

Citation:

M. Satoh et al., "Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures", Materials Science Forum, Vols. 527-529, pp. 791-794, 2006

Online since:

October 2006

Export:

Price:

$38.00

[1] G.L. Harris (Ed. ): Silicon Carbide, EMS Datareviews Series No. 13, (INSPEC, New York 1995).

[2] M. Satoh, K. Okamoto, Y. Yakaike, K. Kuriyama, M. Kanaya, and N. Ohtani: Nucl. Instr. and Meth. B Vol. 148 (1999), p.567.

[3] M. Satoh, Y. Nakaike, and T. Nakamura: J. Appl. Phys. Vol. 89 (2001), p.1986. Figure 4: Annealing temperature dependence of the Xmin value for the samples annealed for 5 min.

Fetching data from Crossref.
This may take some time to load.