Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures

Abstract:

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The annealing behavior of the N+ implantation-induced defects in 4H-SiC(0001) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 200 to 1000 oC. The samples are multiple-implanted by N+ ions with energy range from 15 to 120 keV at a total dose of 2.4 x 1015 /cm2. Three annealing stages are observed by isochronal annealing; first stage from 200 to 400 oC, second stage from 400 to 600 oC and third stage from 600 to 1000 oC. The 80 percent of the N+ implantation-induced defects are annealed out at the temperature above 600 oC. The annealing mechanism of the defects in each stage is discussed.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

791-794

DOI:

10.4028/www.scientific.net/MSF.527-529.791

Citation:

M. Satoh et al., "Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures", Materials Science Forum, Vols. 527-529, pp. 791-794, 2006

Online since:

October 2006

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$35.00

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