Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures
The annealing behavior of the N+ implantation-induced defects in 4H-SiC(0001) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 200 to 1000 oC. The samples are multiple-implanted by N+ ions with energy range from 15 to 120 keV at a total dose of 2.4 x 1015 /cm2. Three annealing stages are observed by isochronal annealing; first stage from 200 to 400 oC, second stage from 400 to 600 oC and third stage from 600 to 1000 oC. The 80 percent of the N+ implantation-induced defects are annealed out at the temperature above 600 oC. The annealing mechanism of the defects in each stage is discussed.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
M. Satoh et al., "Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures", Materials Science Forum, Vols. 527-529, pp. 791-794, 2006