Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)


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The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of Rutherford backscattering spectrometry in the annealing temperature range from 660 to 720 oC . The phosphorus ions were multiply implanted to form the implantation layer with the thickness of 200 nm and the phosphorus concentration of 1 x 1020, 4 x 1020, or 1 x 1021 /cm3, respectively. The recrystallization rate of the P ion implantation-induced amorphous layer in 4H-SiC(11-20) increases with an activation energy of 3.4 eV as does the case of the Ar ion implantation-induced amorphous layer in 6H-SiC(11-20) and (1-100). As the P concentration is increased from 1 x 1020 to 1 x 1021 /cm3, the recrystallization rate is enhanced from 3.5 to about 5nm/min, while the recrystallization rate for the Ar implantationinduced amorphous layer was 1.5 nm/min. It is suggested that the recrystallization process is enhanced by the presence of the substitutional impurity at the amorphous-crystalline interface during the recrystallization.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




M. Satoh and T. Suzuki, "Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)", Materials Science Forum, Vols. 527-529, pp. 799-802, 2006

Online since:

October 2006




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DOI: 10.4028/

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