High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Abstract:

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SiC single crystal ingots grown by sublimation physical vapor transport (PVT) technique were prepared and then the SiC crystal quality with varying crucible design employing a guide tube and tantalum foil was systematically investigated. The growth rate of 2-inch SiC crystal grown by these crucible designs was about 0.3 mm/hr. The n-type and p-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The doping concentration level of below ~1017/cm3 was extracted from the absorption spectrum and Hall measurement. The densities of micropipes and inclusions in SiC crystal boules grown using the graphite/Ta foil double layer guide tube were significantly decreased. Finally we improved crystal quality through the introduction of new crucible design.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

83-86

DOI:

10.4028/www.scientific.net/MSF.527-529.83

Citation:

K. R. Ku et al., "High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design", Materials Science Forum, Vols. 527-529, pp. 83-86, 2006

Online since:

October 2006

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Price:

$35.00

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