Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600°C to 1750°C. Annealing was conducted in a hot-wall CVD reactor using a silanerich ambient. Ar was used as the carrier gas to deliver the silane to the annealing zone where the sample was heated via RF induction. The resulting annealed surfaces exhibited a step-bunch free, smooth morphology when viewed on SEM and AFM. The maximum surface roughness as measured via AFM was 0.65 nm RMS for the sample annealed at 1750°C.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
S. P. Rao et al., "Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD", Materials Science Forum, Vols. 527-529, pp. 839-842, 2006