Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes

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It is investigated whether the homogeneous depth profiles of epitaxially doped B or Al are changed or preserved by implantation of various implanted species and annealing processes. We have found a strong decrease in the atomic B concentration in epitaxially B-doped layers after implantation of N+, Al+, and P+ and subsequent annealing at 1700 °C. On the other hand, the Al profiles in epitaxially Al-doped layers are preserved after the same processes.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

843-846

Citation:

Y. Negoro et al., "Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes", Materials Science Forum, Vols. 527-529, pp. 843-846, 2006

Online since:

October 2006

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[10] [15] [10] [16] [10] [17] [10] [18] [10] [19] Concentration (cm -3 ) 1. 00. 80. 60. 40. 20 Depth (µm) P + implantation into Al-doped 4H-SiC implanted P before annealing after annealing epitaxially doped Al before annealing after annealing.