Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
It is investigated whether the homogeneous depth profiles of epitaxially doped B or Al are changed or preserved by implantation of various implanted species and annealing processes. We have found a strong decrease in the atomic B concentration in epitaxially B-doped layers after implantation of N+, Al+, and P+ and subsequent annealing at 1700 °C. On the other hand, the Al profiles in epitaxially Al-doped layers are preserved after the same processes.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Y. Negoro et al., "Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes", Materials Science Forum, Vols. 527-529, pp. 843-846, 2006