Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

Abstract:

Article Preview

4H-SiC samples implanted at 600°C with 1020 cm-3 of B or B and C to a depth of ~0.5 μm, capped with (BN/AlN), and annealed at temperatures ranging from 1400°C – 1700°C were studied using variable temperature cathodoluminescence. New emission lines, which may be associated with stacking faults, were observed in the samples co-implanted with B and C, but not in the samples implanted only with B. For both the B and B and C co-implanted samples, the intensity of the line near 3.0 eV decreases with increasing annealing temperature, TA, and this line is not observed after annealing at 1700°C. The D1 defect related emission lines are observed in the luminescence spectra of all samples and their relative intensities seem to vary with the implantation-annealing schedule and excitation conditions.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

847-850

Citation:

J. A. Freitas et al., "Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence", Materials Science Forum, Vols. 527-529, pp. 847-850, 2006

Online since:

October 2006

Export:

Price:

$38.00

[1] M.O. Aboelfotoh and J.P. Doyle: Phys. Rev. B Vol. 59 (1999), p.10823.

[2] T. Dailbor, G. Pensl, T. Kimoto, H. Matsunami, S. Srindhara, R.P. Devaty, and W.J. Choyke: Diam. Relat. Mater. Vol. 6 (1997), p.1333.

[3] K.A. Jones, K. Xie, D.W. Eckart, M.C. Wood, B. Talyansky, R.D. Vispute, T. Venkatesan, K. Wongshotful, and M. Spencer: J. Appl. Phys. Vol. 83 (1998), p.8010.

[4] J.A. Freitas, Jr., S.G. Bishop, J.A. Edmond, J. Ryu, and R.F. Davis: J. Appl. Phys. Vol. 61 (1987), p. (2011).

[5] T. Egilsson, J.P. Bergman, I.G. Ivanov, A. Henry, and E. Janzén: Phys. Rev. B. Vol. 59 (1999), p. (1956).

[6] L. Storasta, F.H. Carlsson, S.G. Sridhara, J.P. Bergman, A. Henry, T. Egilsson, A. Hallen, and E. Janzén: Appl. Phys. Lett. Vol. 78 (2001), p.46 Fig. 4. Temperature dependence study of the emission lines associated with the D1.

DOI: https://doi.org/10.1063/1.1334907

Fetching data from Crossref.
This may take some time to load.