Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation
The characteristics of Ni, Monel (Ni-Cu alloy, Ni55mol%-Cu45mol%), Monel/Si, Ni/Ti/Ni and Mo electrodes were studied for ohmic contact to C-face N-type 4H-SiC. Low contact resistivity (ρC) was not compatible with reduction of graphite precipitation in the case of Ni, Monel, Ni/Ti/Ni, and Mo electrodes. Monel/Si achieved less graphite precipitation and low ρC, which is enough to apply for actual rectifier, because a Monel/Si electrode forms a silicide without reaction between the deposits and the substrate.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Y. Maeyama et al., "Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation", Materials Science Forum, Vols. 527-529, pp. 867-870, 2006