Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation


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The characteristics of Ni, Monel (Ni-Cu alloy, Ni55mol%-Cu45mol%), Monel/Si, Ni/Ti/Ni and Mo electrodes were studied for ohmic contact to C-face N-type 4H-SiC. Low contact resistivity (ρC) was not compatible with reduction of graphite precipitation in the case of Ni, Monel, Ni/Ti/Ni, and Mo electrodes. Monel/Si achieved less graphite precipitation and low ρC, which is enough to apply for actual rectifier, because a Monel/Si electrode forms a silicide without reaction between the deposits and the substrate.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




Y. Maeyama et al., "Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation", Materials Science Forum, Vols. 527-529, pp. 867-870, 2006

Online since:

October 2006




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[10] -5.

[2] [4] [6] [10] -4.

[2] [4] [6] [10] -3 Contact resistivity [Ωcm2 ] 7654321.

[10] -3.

[2] [4] [6] [10] -2.

[2] [4] [6] [10] -1Voltage drop at 100A/cm.

[2] [V] Mo Monel Monel/Si Ni/Ti/Ni Ni Ni based Amount of graphite large small electrode -40 -20.

[20] [40] Current [mA] -1. 0 -0. 5 0. 0 0. 5 1. 0 Voltage [V] Ni Monel Monel/Si Ni/Ti/Ni Mo Width=2. 5E-4m Distance=5E-6m.

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