Ohmic Contacts on p-Type SiC Using Al/C Films


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Al based alloys, such as Ti/Al, are commonly used for ohmic contacts on p-type SiC. The interfacial structures of a metal alloy film on SiC are very complicated after annealing. Al is considered as the key element responsible for forming ohmic contacts on p-type SiC, and reacts with C from SiC and forms Al4C3 and Si during annealing. In this study, we have investigated ohmic contact formation of a single component Al4C3 film on p-type SiC. Based on the stoichiometric formation of Al4C3 between Al and C at high temperatures, several samples with various Al/C mole ratios have been examined for ohmic contact formation after different annealing temperatures. Carbon rich and stoichiometric Al4C3 films form ohmic contacts on p-type 4H-SiC (~2.8 x1018 cm-3 ) after annealing at 800 and 900°C. X-ray diffraction (XRD) data have shown that a single component Al4C3 is formed when an ohmic contact on p-type SiC is activated. Al/SiC, as the control sample, does not form ohmic contacts under the same conditions. This study reveals that Al4C3 can be responsible for forming ohmic contacts on p-type SiC. However, its chemical instability requires that the secondary metal is necessary to form stable ohmic contacts when Albased films are used.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




W. J. Lu et al., "Ohmic Contacts on p-Type SiC Using Al/C Films", Materials Science Forum, Vols. 527-529, pp. 899-902, 2006

Online since:

October 2006




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DOI: 10.1016/s0038-1101(97)00168-8

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