The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals

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The defect distribution in 4H-SiC single crystals in dependence on the seed polarity and its off-orientation was investigated by KOH-etching, optical microscopy and X-ray topography. Micropipe density, stacking fault density and dislocation density were determined for 2” crystals grown in <000-1> direction 0 - 7° off towards <11-20> and for crystals up to 1” in diameter grown in <11-20> or a- and <1-100> or m-directions and using repeated a-face growth. For the growth in polar directions the micropipe density and dislocation density decrease with increasing offorientation of the seed. A similar behavior was found for the stacking fault density and dislocation density in non-polar directions with off-orientation to c-direction. Nevertheless, while the dislocation density could be reduced up to three orders of magnitude for the growth along non-polar directions, the stacking fault density was continuously increasing. Additionally, the defect distribution after repeated a-face growth will be discussed in terms of growth related and kinetic models.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

9-14

Citation:

H. J. Rost et al., "The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals", Materials Science Forum, Vols. 527-529, pp. 9-14, 2006

Online since:

October 2006

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$38.00

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