Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC

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The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V measurements. All metal contacts to n- (net donor concentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC show the rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type 3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to 5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC is decreased from 2.2 to 1.8 eV. The small change of SBH for 3C-SiC may be correlated to the crystal orientation and the defects on the surface of 3C-SiC.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

923-926

Citation:

M. Satoh and H. Matsuo, "Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC", Materials Science Forum, Vols. 527-529, pp. 923-926, 2006

Online since:

October 2006

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$38.00

[1] G.L. Harris(Ed. ): Silicon Carbide, EMS Datareviews Series No. 13, (INSPEC, New York 1995).

[2] H. Nagasawa, T. Kawahara, and K. Yagi: Mater. Sci. Forum Vols. 389-393 (2002), p.322.

[3] V. Saxena and A.J. Steckl, in SiC Material and Devices, edited by Y.S. Park, Vol. 52 of Semiconductors and Semimetals, Chap. 3, Academic Press, New York (1998), p.126.

[4] S.P. Murarka: Silicides for VLSI Applications (Academic Press, New York 1983). Figure 3: Annealing temperature dependence of SBHs for Al, Ti, and Ni contacts to n- and p-type 3C-SiC.

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