Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

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We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. We investigated the annealing temperature dependence of Hbs in Mo and the W Schottky contacts for (0001) and (000-1). The Hbs are increased by annealing, except for the W Schottky contact on (0001). The yields of 0.25 cm2 as-deposited Mo-SBDs were 93.3% for (0001) and 71.1% for (000-1), respectively. We also demonstrated over 1 cm2 (0001) as-deposited Mo-SBD with a low leakage current, an excellent ideality factor, and no excess current, encouraging the enlargement of the active area in the SBD.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

927-930

Citation:

T. Nakamura et al., "Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes", Materials Science Forum, Vols. 527-529, pp. 927-930, 2006

Online since:

October 2006

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$38.00

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