High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

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4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up to 400°C. Room temperature boron implantation has been used to form a single zone junction termination extension. Both Ni2Si and Mo diodes revealed unchanging ideality factors and barrier heights (1.45 and 1.3 eV, respectively) at temperatures up to 400°C. Soft recoverable breakdowns were observed both in Ni2Si and Mo Schottky diodes at voltages above 1450 V and 3400 V depending on the epitaxial structure used. These values are about 76% and 94% of the ideal avalanche breakdown voltages. The Ni2Si diodes revealed positive temperature coefficients of breakdown voltage at temperature up to 240°C.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

931-934

Citation:

K. Vassilevski et al., "High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown", Materials Science Forum, Vols. 527-529, pp. 931-934, 2006

Online since:

October 2006

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$38.00

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