High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown
4H-SiC diodes with nickel silicide (Ni2Si) and molybdenum (Mo) Schottky contacts have been fabricated and characterised at temperature up to 400°C. Room temperature boron implantation has been used to form a single zone junction termination extension. Both Ni2Si and Mo diodes revealed unchanging ideality factors and barrier heights (1.45 and 1.3 eV, respectively) at temperatures up to 400°C. Soft recoverable breakdowns were observed both in Ni2Si and Mo Schottky diodes at voltages above 1450 V and 3400 V depending on the epitaxial structure used. These values are about 76% and 94% of the ideal avalanche breakdown voltages. The Ni2Si diodes revealed positive temperature coefficients of breakdown voltage at temperature up to 240°C.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
K. Vassilevski et al., "High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown", Materials Science Forum, Vols. 527-529, pp. 931-934, 2006