Polytype Control in 6H-SiC Grown via Sublimation Method


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6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250°C.



Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow




X. X. Li et al., "Polytype Control in 6H-SiC Grown via Sublimation Method", Materials Science Forum, Vols. 527-529, pp. 95-98, 2006

Online since:

October 2006




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DOI: https://doi.org/10.1016/s0022-0248(99)00835-0

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