Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
K. Matocha et al., "Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 983-986, 2006