Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC

Abstract:

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4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

983-986

DOI:

10.4028/www.scientific.net/MSF.527-529.983

Citation:

K. Matocha et al., "Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 983-986, 2006

Online since:

October 2006

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Price:

$35.00

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