Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method

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Because of the formation of DPB (Double Positioning Boundary) when starting from a hexagonal <0001> seed, DPB-free 3C-SiC single crystals have never been reported up to now. In a recent work we showed that, using adapted nucleation conditions, one could grow thick 3C-SiC single crystal almost free of DPB [1]. In this work we present the results of a multi-scale investigation of such crystals. Using birefringence microscopy, EBSD and HR-TEM, we find evidence of a continuous improvement of the crystal quality with increasing thickness in the most defected area, at the sample periphery. On the contrary, in the large DPB-free area, the SF density remains rather constant from the interface to the surface. The LTPL spectra collected at 5K on the upper part of samples present a nice resolution of multiple bound exciton features (up to m=5) which clearly shows the high (electronic) quality of our 3C-SiC material.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

99-102

DOI:

10.4028/www.scientific.net/MSF.527-529.99

Citation:

L. Latu-Romain et al., "Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method", Materials Science Forum, Vols. 527-529, pp. 99-102, 2006

Online since:

October 2006

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