Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces
A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/ptype 4H-SiC epilayers prior to a standard oxidation process. The corresponding MOS capacitors are investigated by conductance and internal photoemission spectroscopy. The effect of N-implantation on the density of interface traps Dit is studied and a model is proposed, which consistently explains the observed results.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
F. Ciobanu et al., "Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces", Materials Science Forum, Vols. 527-529, pp. 991-994, 2006