Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces

Abstract:

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A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/ptype 4H-SiC epilayers prior to a standard oxidation process. The corresponding MOS capacitors are investigated by conductance and internal photoemission spectroscopy. The effect of N-implantation on the density of interface traps Dit is studied and a model is proposed, which consistently explains the observed results.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

991-994

DOI:

10.4028/www.scientific.net/MSF.527-529.991

Citation:

F. Ciobanu et al., "Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces", Materials Science Forum, Vols. 527-529, pp. 991-994, 2006

Online since:

October 2006

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Price:

$35.00

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