Silicon Carbide and Related Materials 2005

Volumes 527-529

doi: 10.4028/www.scientific.net/MSF.527-529

Silicon Carbide and Related Materials 2005

Description:

Volume is indexed by Thomson Reuters CPCI-S (WoS).
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.



Keywords:
These volumes present papers that were read at the International Conference on Silicon Carbide and Related Materials 2005 (ICSCRM 2005); held in Pittsburgh, Pennsylvania, from September 18-23, 2005.
These proceedings closely reflected the latest experimental and theoretical advances in the bulk growth of SiC, the epitaxial growth of SiC, physical property characterization, processing and devices. Also included are three shorter chapters on porous SiC, SiC nanoparticles and nanowires, III-nitrides and related materials. The impressive progress reported by these papers will be a stimulating source of ideas for all of those working on these materials.

Info:

ISBN-13:
978-0-87849-425-5
Editors:
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages:
1670
Year:
2006
Edition:
hardcover, 2-vol.-set

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