A method for low resistivity resistor on transparent substrate with laser induced plasma assisted by ablation and laser annealing was described. The diffusion distribution for metallization was measured with XPS. The surface profile was analysed with SEM. The minimum resistivity we got was 0.1 /Sq. It demonstrates that the electronic thin film obtained has a very good conductivity. The most important factors for forming electrically conducting films on the transparent substrate are laser fluence, beam scanning and pulse repetition rate. This technology will be useful in the fabrication of LCD electrode, glass defused resistor and circuit on glass.