Thermoelectric Properties of Ni-Doped CoSb3 Prepared by Encapsulated Induction Melting and Hot Pressing

Kim, Mi Jung; Lee, Jung Il; Ur, Soon Chul; Kim, Il Ho

doi:10.4028/www.scientific.net/MSF.534-536.1561

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HomeMaterials Science ForumProgress in Powder MetallurgyThermoelectric Properties of Ni-Doped CoSb3...

Thermoelectric Properties of Ni-Doped CoSb₃ Prepared by Encapsulated Induction Melting and Hot Pressing

Abstract:

Ni-doped CoSb3 was prepared by the encapsulated induction melting and hot pressing, and its doping effects on the thermoelectric properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent heat treatment at 773K for 24 hours. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the appropriate doping.

Info:

Periodical:

Materials Science Forum (Volumes 534-536)

Main Theme:

Progress in Powder Metallurgy

Edited by:

Duk Yong Yoon, Suk-Joong L. Kang, Kwang Yong Eun and Yong-Seog Kim

Pages:

1561-1564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.534-536.1561

Citation:

M. J. Kim et al., "Thermoelectric Properties of Ni-Doped CoSb₃ Prepared by Encapsulated Induction Melting and Hot Pressing", Materials Science Forum, Vols. 534-536, pp. 1561-1564, 2007

Online since:

January 2007

Authors:

Mi Jung Kim, Jung Il Lee, Soon Chul Ur, Il Ho Kim

Keywords:

Doping, Hot-Pressing, Induction Melting, Skutterudite, Thermoelectric

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References

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Paper TitlePages

Preparation and High Temperature Thermoelectric Properties of [Ca₂(Co_0.65Cu_0.35)₂O₄]_0.624CoO₂ Compound

Authors: Xiao Ya Li, Yun Yu, Dong Li Wang, Li Dong Chen

Abstract: [Ca2(Co0.65Cu0.35)2O4]0.624CoO2 polycrystalline samples were prepared using sol-gel method followed by spark plasma sintering. Thermoelectric properties of the samples were examined from room temperature to 1000K. The temperature dependence of electrical conductivity shows that the hole hopping conduction mechanism is dominant for the samples. The activation energy of hopping conduction is 0.11 eV. At the temperature of about 1000K, the electrical resistivity is 7.1m cm, the thermopower is 160 μVK-1, the thermal conductivtity is 2.94Wm-1K-1 and dimensionless figure of merit reaches 0.12. These results indicate [Ca2(Co0.65Cu0.35)2O4]0.624CoO2 is a potential material for high temperature thermoelectric energy conversion.

805

Fabrication and Thermoelectric Properties of p-Type Si_0.8Ge_0.2 Alloy Doped with Boron

Authors: Sung Doo Hwang, Wang Kee Min, Ik Min Park, Young Do Park, Young Seok Kim, Yong Ho Park

Abstract: P-type thermoelectric material Si0.8Ge0.2 was fabricated by mechanical alloying(MA) and Hot-Press Process(HP) The effect of Boron(0.25~2wt%) addition on the thermoelectric properties of p-type Si0.8Ge0.2 alloy was reported. Experiments showed that the electrical conductivity decreased with Boron content at temperature ranging from 500K to 1250K. The carrier concentration measured by the Hall effect measurement also decreased as a function of doping level. With increasing temperature, the Seebeck coefficient and the power factor increased with boron content. Based on measured results, the Figure of Merit (Z) value of 0.5 wt% Si0.8Ge0.2 alloy increased with the small addition of Boron, and reached maximum rapidly; the Z value was 0.9×10-3/K, the highest value among the prepared alloys.

745

Thermoelectric Properties of Bi₂Te₃ Alloy Prepared by Mechanical Alloying and Spark Plasma Sintering

Authors: Min Zhou, Jing Feng Li, Jing Liu

Abstract: The Bi2Te3 compound was synthesized by mechanical alloying (MA) of highly pure constituents of Bi and Te powders, and then was consolidated by spark plasma sintering (SPS) method. The MA-derived alloy formation was characterized by X-ray diffraction (XRD), and the microstructure change was investigated through scanning electron microscopy (SEM). The thermoelectric properties were measured using a Seebeck Coefficient/Electrical Resistance Measuring System. The influence of MA time on the thermoelectric properties of the SPS-sintered samples was investigated to find the optimal MA condition for the powder synthesis and thermoelectric properties. The obtained results showed that the sample with the MA time of 6 h exhibited the optimal electrical transport properties. The maximum power factor of over 2.0 × 10-3 W/m K2 was obtained between 323 K and 423 K.

538

Synthesis and Thermoelectric Properties of Co_4-XFe_XSb_12-YSn_Y Skutterudites

Authors: Kwan Ho Park, Il Ho Kim

Abstract: Co_4-xFe_xSb_12-ySn_y skutterudites were synthesized by mechanical alloying and hot pressing, and thermoelectric properties were examined. The carrier concentration increased by doping and thereby the electrical conductivity increased compared with intrinsic CoSb₃. Every specimen had a positive Seebeck coefficient. Fe doping caused a decrease in the Seebeck coefficient but it could be enhanced by Fe/Sn double doping possibly due to charge compensation. The thermal conductivity was desirably very low and this originated from ionized impurity-phonon scattering. Thermoelectric properties were improved remarkably by Fe/Sn doping, and a maximum figure of merit, ZT = 0.5 was obtained at 723 K in the Co₃FeSb_11.2Sn_0.8 specimen.

Thermoelectric Performance of Glass Microsphere Dispersed Bi-Sb Composites at Low Temperature

Authors: Zhen Chen, Ye Mao Han, Min Zhou, Rong Jin Huang, Yuan Zhou, Lai Feng Li

Abstract: In the present study, the glass microsphere dispersed Bi-Sb thermoelectric materials have been fabricated through mechanical alloying followed by pressureless sintering. The phase composition and the microstructure were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis. Electrical conductivity, Seebeck coefficient and thermal conductivity were measured in the temperature range of 77~300 K. The ZT values were calculated according to the measurement results. The results showed that the electrical conductivity, Seebeck coefficient and thermal conductivity decreased by adding glass microsphere into Bi-Sb thermoelectric materials. However, the optimum ZT value of 0.24 was obtained at 260 K, which was increased 10% than that of the Bi-Sb matrix. So it is confirmed that the thermoelectric performance of Bi-Sb-based materials can be improved by adding moderate glass microspheres.

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