Characterization of GaP Nanowires Synthesized by Chemical Vapor Deposition

Cho, Kwon Koo; Choi, Kyo Hong; Kim, Ki Won; Cho, Gyu Bong; Kim, Yoo Young

doi:10.4028/www.scientific.net/MSF.534-536.25

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Home Materials Science Forum Progress in Powder MetallurgyCharacterization of GaP Nanowires Synthesized by...

Characterization of GaP Nanowires Synthesized by Chemical Vapor Deposition

Abstract:

Gallium phosphide nanowires were successfully synthesized by the catalytic chemical vapor deposition (CVD) method using MgO powder-impregnated nickel oxide as catalyst and gallium phosphide and gallium powders as GaP source. The synthesis of GaP nanowires were carried out at 900°C for 30min under argon ambient and directly vaporized Ga and GaP powder. The diameter of GaP nanowires is about 25~70nm and the length is up to several tens of micrometers. The GaP NWs was core-shell structure, which consists of the GaP core and the Ga oxide outer layers. The GaP nanowires have a single-crystalline zinc blend structured crystals with the [111] growth direction. Nanowires larger than around 50nm in diameter exhibited twinning faults, which appears in the TEM images as discrete dark lines and alternating wire contrast. We demonstrate that MgO powder-impregnated nickel oxide catalyst exhibited a large catalytic effect on the growth of high-purity and -quantity gallium phosphide(GaP).

Info:

Periodical:

Materials Science Forum (Volumes 534-536)

Main Theme:

Progress in Powder Metallurgy

Edited by:

Duk Yong Yoon, Suk-Joong L. Kang, Kwang Yong Eun and Yong-Seog Kim

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.534-536.25

Citation:

K. K. Cho et al., "Characterization of GaP Nanowires Synthesized by Chemical Vapor Deposition", Materials Science Forum, Vols. 534-536, pp. 25-28, 2007

Online since:

January 2007

Authors:

Kwon Koo Cho, Kyo Hong Choi, Ki Won Kim, Gyu Bong Cho, Yoo Young Kim

Keywords:

Chemical Vapor Deposition (CVD), Gallium Phosphide, Nanowire, Nickel Ni, Synthesis, Twinning Fault

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Paper TitlePages

Growth and Microstructure of Gallium Phosphide Nanowires Synthesized by the CVD Method Using Copper Oxide as a Catalyst

Authors: Kyo Hong Choi, Kwon Koo Cho, Yoo Young Kim

Abstract: High purity nanowires are successfully synthesized by chemical vapor deposition. In this work, we have tried synthesis of GaP nanowires with copper oxide catalyst using chemical vapor deposition method involving a metal oxide-assisted vapor-liquid-solid (VLS) growth mechanism. The synthesis process is the same as that described in existing work except for a catalyst. The mixture of GaP and Ga powder was used as GaP source for synthesis of GaP nanowires. And the mixture powder was directly vaporized in the range of 700~1000°C under argon ambient in a furnace. The wire-like products was observed in the range of 800~950°C. The diameter of nanowires increases with increasing synthesis temperature, but reversely, the length of nanowires decreases steadily. The nanowires prepared at 850°C possess perfect wire-like shape and uniform distribution of diameter. The average diameter and length of nanowires are about 50 and 150, respectively. HRTEM and EDX analysis were carried out to obtain more detailed information of its microstructure. Nevertheless, all condition of processing was set for making the high purity GaP nanowires as existing reported method, the nanowires were identified as well-crystallized gallium oxide nanowires with an amorphous outer layer. It does not accord with existing reported results. This result means that the catalysts play a key role in the growth of nanowires.

Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates

Authors: Johannes Reiprich, Thomas Stauden, Theresa Berthold, Marcel Himmerlich, Jörg Pezoldt, Heiko O. Jacobs

Abstract: Gallium oxide nanowires were grown on different substrates using a corona plasma assisted vapor phase epitaxy process and gold catalyst. It is shown that the silicon carbide pseudo substrate in combination with the plasma excitation of the gas phase supports the growth of the gallium oxide nanowires. Analyzing the orientation of the nanowires with respect to the growth surface, it is concluded that the nanowires growth proceed along the fast growth direction of gallium oxide.

642

Periodically Structured Silicon Carbide Nanowires Obtained by Annealing the Mechanically-Alloyed Amorphous 2SiB3CN Powder

Authors: Peng Fei Zhang, Bin Yang, Zhi Lu, Guang Xin Wang

Abstract: The mechanically-alloyed amorphous 2SiB3CN powder was used as the precursor for the preparation of SiC nanowires in the current work. Annealed at 1700 °C in argon for 2 hrs, the composite powder was covered by a large amount of grey-green SiC nanowires. SEM, TEM and XRD results reveal that the nanowires are 200 to 1000 nanometers in diameter and hundreds of micrometers in length. Bamboo-shaped and nodular-like β-SiC nanowire accounts for the major part of the products. The bamboo-shaped nanowires have perfect periodicity and periodically distributed stacking faults. Further research indicates that traces of iron in raw powders acts as catalyst, promoting the V-L-S process of the nanowire growth. Current route provides a new method for the large-scale preparation of the periodically structured SiC nanowires, which may find applications in nano sensors, optoelectronic devices, etc.

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