Characterization of GaP Nanowires Synthesized by Chemical Vapor Deposition

Cho, Kwon Koo; Choi, Kyo Hong; Kim, Ki Won; Cho, Gyu Bong; Kim, Yoo Young

doi:10.4028/www.scientific.net/MSF.534-536.25

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Home Materials Science Forum Progress in Powder MetallurgyCharacterization of GaP Nanowires Synthesized by...

Characterization of GaP Nanowires Synthesized by Chemical Vapor Deposition

Abstract:

Gallium phosphide nanowires were successfully synthesized by the catalytic chemical vapor deposition (CVD) method using MgO powder-impregnated nickel oxide as catalyst and gallium phosphide and gallium powders as GaP source. The synthesis of GaP nanowires were carried out at 900°C for 30min under argon ambient and directly vaporized Ga and GaP powder. The diameter of GaP nanowires is about 25~70nm and the length is up to several tens of micrometers. The GaP NWs was core-shell structure, which consists of the GaP core and the Ga oxide outer layers. The GaP nanowires have a single-crystalline zinc blend structured crystals with the [111] growth direction. Nanowires larger than around 50nm in diameter exhibited twinning faults, which appears in the TEM images as discrete dark lines and alternating wire contrast. We demonstrate that MgO powder-impregnated nickel oxide catalyst exhibited a large catalytic effect on the growth of high-purity and -quantity gallium phosphide(GaP).

Info:

Periodical:

Materials Science Forum (Volumes 534-536)

Main Theme:

Progress in Powder Metallurgy

Edited by:

Duk Yong Yoon, Suk-Joong L. Kang, Kwang Yong Eun and Yong-Seog Kim

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.534-536.25

Citation:

K. K. Cho et al., "Characterization of GaP Nanowires Synthesized by Chemical Vapor Deposition", Materials Science Forum, Vols. 534-536, pp. 25-28, 2007

Online since:

January 2007

Authors:

Kwon Koo Cho, Kyo Hong Choi, Ki Won Kim, Gyu Bong Cho, Yoo Young Kim

Keywords:

Chemical Vapor Deposition (CVD), Gallium Phosphide, Nanowire, Nickel Ni, Synthesis, Twinning Fault

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References

[1] J. Hu, T.W. Odom, C.M. Lieber, Acc. Chem. Res. 32 (1999) 435.

[2] M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, Science 292 (2001) 1897.

[3] M.S. Gudiksen, L.J. Lauhon, J. Wang, D.C. Smith, C.M. Lieber, Nature 415 (2002) 617.

[4] X.F. Duan, C.M. Lieber, J. Am. Chem. Soc. 122 (2000) 188.

[5] T.J. Trentler, K.M. Hickman, S.C. Goel, A.M. Viano, P.C. Gibbsons, W.E. Buhro, Science 270 (1995) 1791.

[6] K.W. Wong, X.T. Zhou, F.C.K. Au, H.L. Lai, C.S. Lee, S.T. Lee, Appl. Phys. Lett. 75 (1999) (1925).

[7] D.P. Yu, Q.L. Hang, Y. Ding, H.Z. Zhang, Z.G. Bai, J.J. Wang, Y.H. Zou, W. Qian, G.C. Xiong, S.Q. Feng, Appl. Phys. Lett. 73 (1998) 3076.

[8] N. Wang, Y.H. Tang, Y.F. Zhang, C.S. Lee, I. Bello, S.T. Lee, Chem. Phys. Lett. 299 (1999) 237.

[9] E. W . Wong, P.E. Sheehan, C.M. Lieber, Science 277 (1997) (1971).

[10] D. Snoke, Science 273 (1996) 1351.

[11] W. Han, S. Fan, Q. Li, Y. Hu, Science 277 (1997) 1287.

[12] J.R. Heath, P.J. Kuenkes, G. Synder, R.S. Williams, Science 280 (1998) 1717.

[13] W.Q. Han, A. Zettl, Appl. Phys. Lett. 80 (2002) 3548.

[14] M.S. Guidikson, C.M. Lieber, J. Am, Chem. Soc. 122 (2000) 8801.

[15] For a recent review, see Xia, Y.N. Yang, P.D. Sun, Y.G. Wu, Y.Y. Mayers, B. Yin, Y.D. Kim, F. Yan, Y.Q. Adv. Master. 2003, 15, 353.

[16] Wagner, R. S. Ellis, W. C, Appl. Phys. Lett. 1964, 4, 89.

[17] Duan, X. Lieber, C.M. Adv. Master. 2000, 12, 298.

Paper TitlePages

Growth and Microstructure of Gallium Phosphide Nanowires Synthesized by the CVD Method Using Copper Oxide as a Catalyst

Authors: Kyo Hong Choi, Kwon Koo Cho, Yoo Young Kim

Abstract: High purity nanowires are successfully synthesized by chemical vapor deposition. In this work, we have tried synthesis of GaP nanowires with copper oxide catalyst using chemical vapor deposition method involving a metal oxide-assisted vapor-liquid-solid (VLS) growth mechanism. The synthesis process is the same as that described in existing work except for a catalyst. The mixture of GaP and Ga powder was used as GaP source for synthesis of GaP nanowires. And the mixture powder was directly vaporized in the range of 700~1000°C under argon ambient in a furnace. The wire-like products was observed in the range of 800~950°C. The diameter of nanowires increases with increasing synthesis temperature, but reversely, the length of nanowires decreases steadily. The nanowires prepared at 850°C possess perfect wire-like shape and uniform distribution of diameter. The average diameter and length of nanowires are about 50 and 150, respectively. HRTEM and EDX analysis were carried out to obtain more detailed information of its microstructure. Nevertheless, all condition of processing was set for making the high purity GaP nanowires as existing reported method, the nanowires were identified as well-crystallized gallium oxide nanowires with an amorphous outer layer. It does not accord with existing reported results. This result means that the catalysts play a key role in the growth of nanowires.

Growth, Surface Morphology and Optical Properties of Gallium Nitride Nanowires

Authors: V. Suresh Kumar, J. Kumar

Abstract: We report on the growth mechanism, structural and optical characterstics of Gallium nitride nanowires prepared on sapphire substrates (0001) by reacting metal gallium with Gallium nitride powder and ammonia in the temperature range of 800 to 1050°C. GaN nanowires samples were characterized by using X-ray diffraction technique which shows wurtzite structure of GaN nanowires and the lattice parameters are calculated. Scanning electron microscopy images reveals that the dimension of the nanowires are around 60 – 80 nm and the length of 1 - 2 millimeters. Three Raman modes of GaN have been observed at frequencies 530, 554 and 564 cm-1. Photoluminescence spectrum reveals the band edge at 3.4 eV and gives yellow luminescence.

Corona Assisted Ga Based Nanowire Growth on 3C-SiC(111)/Si(111) Pseudosubstrates

Authors: Johannes Reiprich, Thomas Stauden, Theresa Berthold, Marcel Himmerlich, Jörg Pezoldt, Heiko O. Jacobs

Abstract: Gallium oxide nanowires were grown on different substrates using a corona plasma assisted vapor phase epitaxy process and gold catalyst. It is shown that the silicon carbide pseudo substrate in combination with the plasma excitation of the gas phase supports the growth of the gallium oxide nanowires. Analyzing the orientation of the nanowires with respect to the growth surface, it is concluded that the nanowires growth proceed along the fast growth direction of gallium oxide.

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