Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition
We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.
T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran
H. W. Kim and S.H. Shim, "Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition", Materials Science Forum, Vols. 539-543, pp. 1230-1235, 2007