Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

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We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

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Periodical:

Materials Science Forum (Volumes 539-543)

Main Theme:

Edited by:

T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran

Pages:

1230-1235

DOI:

10.4028/www.scientific.net/MSF.539-543.1230

Citation:

H. W. Kim and S.H. Shim, "Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition", Materials Science Forum, Vols. 539-543, pp. 1230-1235, 2007

Online since:

March 2007

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$38.00

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