Growth and Atomistic Structure Study of Disordered SiGe Mixed Semiconductors

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The atomistic structure of Czochralski-grown SixGe1-x binary mixed semiconductor was studied experimentally and theoretically. By extended X-ray absorption fine structure (XAFS) studies it was found that bulk SiGe semiconductor is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion against the alloy composition across the whole composition range 0 < x < 1, in good agreement with expectations derived from the ab-inito electronic structure calculations. The result indicates that SiGe is a suitable model for a disorder mixed material and that the bond lengths and bond angles are distorted with the composition.

Info:

Periodical:

Materials Science Forum (Volumes 539-543)

Main Theme:

Edited by:

T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran

Pages:

2043-2047

DOI:

10.4028/www.scientific.net/MSF.539-543.2043

Citation:

I. Yonenaga et al., "Growth and Atomistic Structure Study of Disordered SiGe Mixed Semiconductors", Materials Science Forum, Vols. 539-543, pp. 2043-2047, 2007

Online since:

March 2007

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$35.00

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