Hydrogen Measurements in SiNx: H/Si Thin Films by ERDA

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Thin SiN film deposited on Si by plasma enhanced chemical vapour deposition (PECVD) is used for surface passivation of Si. During the PECVD process Hydrogen is incorporated into the SiN film, and the passivation properties of the resulting SiNx:H layers play an important role in enhancing the energy conversion efficiency of solar cells. It is believed that the Hydrogen present in SiNx:H is responsible for this enhancement, and therefore its concentration in the passivating layer is an important parameter. The Hydrogen composition and its depth profile in thin SiNx:H films of 20nm to 200nm was measured by elastic recoil detection analysis (ERDA), using a 1.7MeV He+ ion beam of (1x2)mm2, generated by a high stability 2MV Tandetron ion beam accelerator. Simultaneously, Rutherford backscattering (RBS) spectra were recorded for each sample. The results show that the Hydrogen concentration in the SiNx:H layers is dependent of the deposition conditions. Also, Hydrogen was found to be homogenously distributed across the SiNx:H layer thickness, and the SiNx:H/Si interfaces were well defined.

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Periodical:

Materials Science Forum (Volumes 539-543)

Main Theme:

Edited by:

T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran

Pages:

3551-3556

DOI:

10.4028/www.scientific.net/MSF.539-543.3551

Citation:

M. Ionescu et al., "Hydrogen Measurements in SiNx: H/Si Thin Films by ERDA", Materials Science Forum, Vols. 539-543, pp. 3551-3556, 2007

Online since:

March 2007

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$35.00

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