An integrated sensor method is used to measure interfacial temperature profiles with an ultrasonic friction test process. The profiles are compared to numerical results obtained by a transient thermal 2D axisymmetric finite elements (FE) analysis. In the experiments, the 50 $m diameter gold balls used in wire bonding are deformed by the capillary tool during impacting on the flat surface of a silicon chip (contact zone). The deformed balls then are pressed onto the SiO2 layer on the chip and vibrated with various amplitudes of 128 kHz ultrasonics. The 52 $m diameter contact zone is surrounded in 14 $m distance by a 50 aluminum resistor which is used as a resistive temperature detector. Temperature increases of typically 0.18 K and up to 0.3 K are measured by the sensor close to the heat source at the contact zone, corresponding to 3.1 K and 5.2 K at the interface as suggested by the FE model. With typical bonding parameters, the contact zone friction power is determined to be 4.4 mW which is less than 2 % of the electrical energy delivered to the used ultrasonic transducer type.