Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal

Abstract:

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In this work, the comprehensive study of an interesting Pd/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) based hydrogen sensor is implemented. The theoretical analysis and simulation are made by using a two-dimensional simulator Medici. In addition, a practical device is fabricated successfully. Based on the variations of the catalytic metal work function, the DC characteristics of experimental and simulated results are compared and studied.

Info:

Periodical:

Materials Science Forum (Volumes 539-543)

Main Theme:

Edited by:

T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran

Pages:

5025-5030

DOI:

10.4028/www.scientific.net/MSF.539-543.5025

Citation:

K. W. Lin "Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal", Materials Science Forum, Vols. 539-543, pp. 5025-5030, 2007

Online since:

March 2007

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$35.00

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