Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal


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In this work, the comprehensive study of an interesting Pd/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) based hydrogen sensor is implemented. The theoretical analysis and simulation are made by using a two-dimensional simulator Medici. In addition, a practical device is fabricated successfully. Based on the variations of the catalytic metal work function, the DC characteristics of experimental and simulated results are compared and studied.



Materials Science Forum (Volumes 539-543)

Main Theme:

Edited by:

T. Chandra, K. Tsuzaki, M. Militzer , C. Ravindran




K. W. Lin, "Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal", Materials Science Forum, Vols. 539-543, pp. 5025-5030, 2007

Online since:

March 2007





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