Chemical and Electrical Properties of ZnS Deposited with DEZ and H2S by Atomic Layer Deposition Method
ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl- Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.
Hyungsun Kim, Junichi Hojo and Soo Wohn Lee
S. W. Kuk et al., "Chemical and Electrical Properties of ZnS Deposited with DEZ and H2S by Atomic Layer Deposition Method", Materials Science Forum, Vols. 544-545, pp. 689-692, 2007