Chemical and Electrical Properties of ZnS Deposited with DEZ and H2S by Atomic Layer Deposition Method

Abstract:

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ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl- Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.

Info:

Periodical:

Materials Science Forum (Volumes 544-545)

Edited by:

Hyungsun Kim, Junichi Hojo and Soo Wohn Lee

Pages:

689-692

DOI:

10.4028/www.scientific.net/MSF.544-545.689

Citation:

S. W. Kuk et al., "Chemical and Electrical Properties of ZnS Deposited with DEZ and H2S by Atomic Layer Deposition Method", Materials Science Forum, Vols. 544-545, pp. 689-692, 2007

Online since:

May 2007

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Price:

$35.00

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