Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate


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The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.



Materials Science Forum (Volumes 544-545)

Edited by:

Hyungsun Kim, Junichi Hojo and Soo Wohn Lee




I. J. Back et al., "Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate", Materials Science Forum, Vols. 544-545, pp. 753-756, 2007

Online since:

May 2007




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