Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate

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The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.

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Periodical:

Materials Science Forum (Volumes 544-545)

Edited by:

Hyungsun Kim, Junichi Hojo and Soo Wohn Lee

Pages:

753-756

Citation:

I. J. Back et al., "Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate", Materials Science Forum, Vols. 544-545, pp. 753-756, 2007

Online since:

May 2007

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$38.00

[1] B. K. Crone, A. Dodabalapur, R. Sarpeshkar, A. Gelperin, H. E. Katz, and Z. N. Bao, J. Appl. Phys. vol. 91, 10140 (2002).

DOI: https://doi.org/10.1063/1.1476084

[2] J. H. Lee, S. H. Kim, G. H. Kim, J. I. Lee, Y. S. Yang, H. Y. Chu, J. Y. Oh, L. M. Do and T. Zyung, J. Kor. Phys. Soc., vol. 42, S614 -S617 (2003).

[3] Y. S. Yang, S. H. Kim, J. I. Lee, H. Y. Chu, L. M. Do, H. Lee, J. Oh, and T. Zyung, Appl. Phys. Lett., vol. 80, pp.1595-1597, (2002).

[4] Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Transactions on Electron Devices, vol. 44, pp.1325-1331, (1997).

[5] D. B. Mitzi, C. D. Dimitrakopoulos and L. L. Kosbar, Chem. Mater., vol. 13, 3728 (2001).

[6] Mc Graw-Hill, Principles of Electronic Materials and Devices., Second Edition, (2002).