Effect of Mo on the Oxidation Behavior of NiTiAl Alloy


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The effect of Mo on the oxidation behavior of TiNiAl at 1073K has been investigated. It is found that 1at.% Mo addition can increase the diffusion of Al in the alloys and promote the formation of dense and continuous Al-rich oxide layer. Therefore the oxygen diffusion can be effectively impeded and the oxidation behavior of TiNiAl is improved. The observation of the cross-sectional oxidation layer showed that beneath the top oxide scale a Mo-rich oxide layer formed. Because the oxide of Mo is volatile at high temperature, voids formed in the oxide scales during the oxidation process. 3at.% Mo addition could cause cracks between the oxide scale and the substrate, resulting in poor adhesion of the oxide scale to the substrate.



Materials Science Forum (Volumes 546-549)

Edited by:

Yafang Han et al.




J. Xu et al., "Effect of Mo on the Oxidation Behavior of NiTiAl Alloy", Materials Science Forum, Vols. 546-549, pp. 1481-1484, 2007

Online since:

May 2007




[1] K. Otsuka, C.M. Wayman, in: Shape Memory Materials, edited by Cambridge University Press, London, (1998), 1.

[2] T.W. Duerig, K.N. Melton, J.L. Proft , In: Engineering Aspects of Shape Memory Alloys, edited by �Btterworth-Heinemann�London, (1990), 130.

DOI: https://doi.org/10.1016/b978-0-7506-1009-4.50015-9

[3] B. Thierry, M. Tabrizian, C. Trepanier, O. Savadogo, L.H. Yahia, J. Biomed: Mater. Res. Vol. 51 (2000), p.685.

[4] D.J. Wever, A.G. Veldhuizen, J. deVries, H.J. Busscher, D.R.A. Uges, J.R. van : Biomaterials Vol. 19 (1998), p.761.

[5] Y. Koizumi, Y. Ro, S. Nakazawa, H. Harada: Materials Science and Engineering A Vol. 223 (1197), pp.36-41.

[6] B.G. Kim, G.M. Kim: Scripta Metallurgica et Materialia Vol. 33 (1995), pp.117-1125.

[7] C.J. Ye, T.F. Li, J.N. Shen: Acta Metallugica Sinica Vol. 30 (1994), pp.44-48.

[8] Yoshiaki Shida, Hiroyuki Anada: Oxidation of Metal Vol. 45 (1996), pp.197-218.

[9] P. Perez, J.A. Jimenez, G. Frommeyer, P. Adeva: O Materials Science and Engineering A Vol. 284 (2000) , pp.138-147.